IRFH5210TRPBF

1.Lower Conduction poho
2.Enable maikaʻi thermal dissipation
3.Hoʻonui i ka hilinaʻi
4. Hoʻonui i ka Mana Mana
5.Multi-Vendor Compatibility
6.Easier Manufacturing
7.Environmentally Friendlier
8. Hoʻonui i ka hilinaʻi

Helu hapa o ka mea hana: IRFH9310TRPBF
Mea Hana / BrandInternational Rectifier (Infineon Technologies)
Mahele o ka wehewehe: MOSFET P-CH 30V 21A PQFN
Kūlana Lead Free / Kūlana RoHS: Lead free / RoHS Compliant
Kūʻai Kūʻai: Mea hou, 12000 pcs Loaʻa ka waiwai.
Moku mai:Hong Kong
Ke ala hoʻouna: DHL / Fedex / TNT / UPS
Huahana Huahana Huli Waiwai E koho i ka Huli
Helu Mahele IRFH9310TRPBF
Mea Hana Hana / Brand International Rectifier (Infineon Technologies)
Kūʻai Nui 12000 pcs Kūʻai
Māhele Nā Huahana Semiconductor Discrete > Transistors - FETs, MOSFETs - Single
Wehewehe MOSFET P-CH 30V 21A PQFN
Kūlana Kūʻokoʻa Lead / Kūlana RoHS: Lead free / RoHS Compliant
Laulā - Loko -55°C ~ 150°C (TJ)
Voltage/I kēia manawa - Puke 1 PQFN (5x6)
Hoʻomanawanui 5250pF @ 15V
Kaila P-ʻano huelo
Kaʻanuʻu Angle MOSFET (Metal Oxide)
Hoʻemi i nā ʻenehana Infineon i ka wela
ʻAno SFP/XFP ± 20V
Hiki mamao HEXFET®
Pitch - Mauna ʻili Uila
Nā inoa ʻē aʻe Lead free / RoHS Compliant
Nā inoa ʻē aʻe 1
ʻAno Oscillator 8-PowerVDFN
Ka helu o ka DAC 30V
Kaumaha kikoʻī wai liʻiliʻi -
ʻO ka hoʻohālikelike ʻana 4.6 mOhm @ 21A, 10V
Helu hapa o ka mea hana IRFH9310TRPBFDKR-ND
Ka lōʻihi - Barrel Digi-Reel®
Kala kukui 4.5V, 10V
Voltage ʻaoʻao kiʻekiʻe - Max (Bootstrap) 21A (Ta), 40A (Tc)
Hana 58nC @ 4.5V
Coil Power Active
Kahiki Kanika (CS(off), CD(off)) 3.1W (Ta)
ʻAno Heluhelu Kāleka 2.4V @ 100µA
Nā hiʻohiʻona a me nā pono
Nā hiʻohiʻona i nā pōmaikaʻi
Haʻahaʻa RDSon (≤ 4.6mΩ) Haʻahaʻa Conduction Pohō
ʻOihana Kūʻai Kūʻai PQFN Pūʻulu Nui-Vendor Compatibility
ʻO RoHS Compliant ʻaʻohe alakaʻi, ʻaʻohe Bromide a ʻaʻohe Halogen ʻoi aku ka maikaʻi
hopena ma
Nānā
Ka Nui Puka
IRFH9310TRPBF PQFN 5mm x 6mm Pipi a me ka Reel 4000
Helu ʻāpana hiki ke hoʻonohonoho ʻia ʻAno Pūʻulu Pūʻulu maʻamau
VDS -30 V
RDS (ma) ka nui
(@VGS = 10V) 4.6 mΩ
Qg (maʻamau) 110 nC
RG (maʻamau) 2.8 Ω
ID
(@TA = 25°C) -21 A
Nā helu kiʻekiʻe loa
Nā ʻāpana ʻāpana
VDS Drain-to-Source Voltage
Voltage VGS Pute-to-Source Voltage
ID @ TA = 25°C Hoomau Waiwai Au, VGS @ -10V
ID @ TA = 70°C Hoomau Waiwai, VGS @ -10V
ID @ TC = 25°C Hoʻomau ʻAi ʻAi ʻia, VGS @ -10V (Silicon Limited)
ID @ TC = 70°C Hoʻokuʻu Hoʻomau ʻia, VGS @ -10V (Silicon Limited)
ID @ TC = 25°C Hoʻokuʻu Hoʻomau i kēia manawa, VGS @ -10V (Package Limited)
IDM Pulsed Drain I kēia manawa
PD @TA = 25°C Hoʻopau Mana
PD @ TA = 70°C Holoi Mana
Huina Hoʻohaʻahaʻa Linear W/°C
TJ Operating Junction a me
ʻO ka wela wela o ka TSTG
Ka helu helu hou;ka laula pulse i kaupalena ʻia e ka max.wela hui.
Hoʻomaka TJ = 25°C, L = 1.1mH, RG = 50Ω, IAS = -17A.
Pulse laula ≤ 400µs;pōʻai hana ≤ 2%.
Ke kau ʻia ma luna o 1 ʻīniha ʻāpana keleawe papa.
Ana ʻia ʻo Rθ ma TJ ma kahi o 90°C.
No DESIGN AID WALE, ʻaʻole i hoʻāʻo ʻia.